Development and comparison of the techniques for solving the inverse problem in photoacoustic characterization of semiconductors

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dc.citation.epage16
dc.citation.spage2
dc.citation.volume381
dc.contributor.authorNesic, M.
dc.contributor.authorPopovic, M.
dc.contributor.authorDjordjevic, K.
dc.contributor.authorMiletic, V.
dc.contributor.authorJordovic‑Pavlovic, M.
dc.contributor.authorMarkushev, D.
dc.contributor.authorGalovic, S.
dc.date.accessioned2023-05-31T12:38:15Z
dc.date.available2023-05-31T12:38:15Z
dc.date.issued2021
dc.description.abstractIn this work, theoretically/mathematically simulated (TMS) model is presented for the photoacoustic (PA) frequency response of a semiconductor in a minimum volume PA cell. By analyzing of the TMS model, the influences of thermal diffusivity and linear coefficient of thermal expansion on silicon sample PA frequency response were investigated and two methods were developed for their estimation. The first one is a self consistent inverse procedure for solving the exponential problems of mathematical physics, based on regression. The second one, a well trained three-layer perceptron with back propagation, based upon theory of artificial neural networks, is developed and presented. These two inverse problem solving concepts are applied to thermo-elastic characterization of silicon, compared and discussed in the domain of semiconductor characterization.
dc.identifier.doi10.1007/s11082-021-02958-0
dc.identifier.urihttps://vaseljena.ues.rs.ba/handle/123456789/247
dc.language.isoen
dc.publisherSpringer
dc.sourceOptical and Quantum Electronics
dc.subjectPhotoacoustic · Inverse problem · Semiconductors · Minimum volume cell · Neural networks · Thermal diffusivity · Linear coefficient of thermal expansion
dc.titleDevelopment and comparison of the techniques for solving the inverse problem in photoacoustic characterization of semiconductors
dc.typeArticle
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